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Cited 57 time in webofscience Cited 64 time in scopus
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dc.contributor.authorShin, K-
dc.contributor.authorYang, CW-
dc.contributor.authorYang, SY-
dc.contributor.authorJeon, HY-
dc.contributor.authorPark, CE-
dc.date.accessioned2015-06-25T01:15:38Z-
dc.date.available2015-06-25T01:15:38Z-
dc.date.created2009-03-17-
dc.date.issued2006-02-13-
dc.identifier.issn0003-6951-
dc.identifier.other2015-OAK-0000005697en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/9550-
dc.description.abstractThe effects of the surface roughness of the polymer gate dielectrics on pentacene field-effect transistors were investigated. Using a poly(methylmethacrylate)/anodized Al2O3 dual-layer gate dielectric, the root-mean-square roughness of the gate dielectrics varied from 0.45 to 1.51 nm, independently of other gate dielectric properties such as the capacitance and surface energy. This range of root-mean-square roughnesses had little effect on the carrier mobility. X-ray diffraction analyses further revealed that the roughness of poly(methylmethacrylate) neither decreased the degree of crystallinity nor distorted the crystalline structure of pentacene.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.relation.isPartOfAPPLIED PHYSICS LETTERS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleEffects of polymer gate dielectrics roughness on pentacene field-effect transistors-
dc.typeArticle-
dc.contributor.college화학공학과en_US
dc.identifier.doi10.1063/1.2176858-
dc.author.googleShin, Ken_US
dc.author.googleYang, CWen_US
dc.author.googlePark, CEen_US
dc.author.googleJeon, HYen_US
dc.author.googleYang, SYen_US
dc.relation.volume88en_US
dc.relation.issue7en_US
dc.contributor.id10104044en_US
dc.relation.journalAPPLIED PHYSICS LETTERSen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.88, no.7-
dc.identifier.wosid000235393700055-
dc.date.tcdate2019-01-01-
dc.citation.number7-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume88-
dc.contributor.affiliatedAuthorPark, CE-
dc.identifier.scopusid2-s2.0-32944477050-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc49-
dc.description.scptc50*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle-
dc.subject.keywordPlusTHIN-FILM TRANSISTORS-
dc.subject.keywordPlusELECTRONIC TRANSPORT-
dc.subject.keywordPlusPERFORMANCE-
dc.subject.keywordPlusMORPHOLOGY-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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박찬언PARK, CHAN EON
Dept. of Chemical Enginrg
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