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Influence of the dielectric constant of a polyvinyl phenol insulator on the field-effect mobility of a pentacene-based thin-film transistor SCIE SCOPUS

Title
Influence of the dielectric constant of a polyvinyl phenol insulator on the field-effect mobility of a pentacene-based thin-film transistor
Authors
Jang, YKim, DHPark, YDCho, JHHwang, MCho, KW
Date Issued
2005-10-10
Publisher
AMER INST PHYSICS
Abstract
The mobility of pentacene thin-film transistors (TFTs) is correlated with the dielectric properties of their insulators. We varied the dielectric properties of the poly(4-vinylphenol) insulators of such TFTs by changing the molar ratio of the prepolymer/cross-linking agent while keeping the surface potential of the insulator surface constant. It was found that the field-effect mobility of the pentacene TFTs increases with increases in the dielectric constant of the insulators. A small increase in the dielectric constant of the insulator (a 20% increase, 3.6-4.3) was found to result in a dramatic increase in the field-effect mobility of pentacene TFTs by a factor of 3 (0.26 to 0.81 cm(2)/V s). (C) 2005 American Institute of Physics.
URI
https://oasis.postech.ac.kr/handle/2014.oak/9490
DOI
10.1063/1.2093940
ISSN
0003-6951
Article Type
Article
Citation
APPLIED PHYSICS LETTERS, vol. 87, no. 15, 2005-10-10
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조길원CHO, KIL WON
Dept. of Chemical Enginrg
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