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Cited 66 time in webofscience Cited 85 time in scopus
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dc.contributor.authorJang, Y-
dc.contributor.authorKim, DH-
dc.contributor.authorPark, YD-
dc.contributor.authorCho, JH-
dc.contributor.authorHwang, M-
dc.contributor.authorCho, KW-
dc.date.accessioned2015-06-25T01:11:48Z-
dc.date.available2015-06-25T01:11:48Z-
dc.date.created2009-08-25-
dc.date.issued2005-10-10-
dc.identifier.issn0003-6951-
dc.identifier.other2015-OAK-0000005454en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/9490-
dc.description.abstractThe mobility of pentacene thin-film transistors (TFTs) is correlated with the dielectric properties of their insulators. We varied the dielectric properties of the poly(4-vinylphenol) insulators of such TFTs by changing the molar ratio of the prepolymer/cross-linking agent while keeping the surface potential of the insulator surface constant. It was found that the field-effect mobility of the pentacene TFTs increases with increases in the dielectric constant of the insulators. A small increase in the dielectric constant of the insulator (a 20% increase, 3.6-4.3) was found to result in a dramatic increase in the field-effect mobility of pentacene TFTs by a factor of 3 (0.26 to 0.81 cm(2)/V s). (C) 2005 American Institute of Physics.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.relation.isPartOfAPPLIED PHYSICS LETTERS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleInfluence of the dielectric constant of a polyvinyl phenol insulator on the field-effect mobility of a pentacene-based thin-film transistor-
dc.typeArticle-
dc.contributor.college화학공학과en_US
dc.identifier.doi10.1063/1.2093940-
dc.author.googleJang, Yen_US
dc.author.googleKim, DHen_US
dc.author.googleCho, KWen_US
dc.author.googleHwang, Men_US
dc.author.googleCho, JHen_US
dc.author.googlePark, YDen_US
dc.relation.volume87en_US
dc.relation.issue15en_US
dc.contributor.id10077904en_US
dc.relation.journalAPPLIED PHYSICS LETTERSen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.87, no.15-
dc.identifier.wosid000232442200041-
dc.date.tcdate2019-01-01-
dc.citation.number15-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume87-
dc.contributor.affiliatedAuthorCho, KW-
dc.identifier.scopusid2-s2.0-28344436104-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc55-
dc.description.scptc67*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle-
dc.subject.keywordPlusGATE INSULATORS-
dc.subject.keywordPlusLAYERS-
dc.subject.keywordPlusFET-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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조길원CHO, KIL WON
Dept. of Chemical Enginrg
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