Analog Figure-of-Merits Comparison of Gate Workfunction Variability and Random Discrete Dopant Between Inversion-Mode and Junctionless Nanowire FETs
SCIE
- Title
- Analog Figure-of-Merits Comparison of Gate Workfunction Variability and Random Discrete Dopant Between Inversion-Mode and Junctionless Nanowire FETs
- Authors
- Kim, Jiwon; Oh, Hyeongwan; Jin, Bo; Baek, Rock-Hyun; Lee, Jeong-Soo
- Date Issued
- 2018-09
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Abstract
- The analog figure-of-merits (FOMs) of conventional inversion-mode (IM) and junctionless (JL) NanoWire Field Effect Transistor (NWFET) have been investigated, considering the gate WorkFunction Variability (WFV) and Random Discrete Dopant (RDD) using 3-dimensional (3D) TCAD simulation. While the JL-NWFET shows higher immune to WFV on analog FOMs, it can be easily affected by RDD due to higher channel doping level. On the other hand, the IM-NWFET shows stronger correlation between transconductance (g(m)) and gate capacitance (C-gg), leading to similar variation in cut-off frequency (f(t)) even though it shows larger g(m) and C-gg variation compared to JL-NWFET.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/94677
- DOI
- 10.1166/jnn.2018.15704
- ISSN
- 1533-4880
- Article Type
- Article
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, vol. 18, no. 9, page. 6598 - 6601, 2018-09
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