Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with nano-patterned AlN/sapphire substrates
SCIE
SCOPUS
- Title
- Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with nano-patterned AlN/sapphire substrates
- Authors
- Lee, D.; Lee, J.W.; Jang, J.; Shin, I.-S.; Jin, L.; Park, J.H.; Kim, J.; Lee, J.; Noh, H.-S.; Kim, Y.-I.; Park, Y.; Lee, G.-D.; Park, Y.; Kim, J.K.; Yoon, E.
- Date Issued
- 2017-05
- Publisher
- AMER INST PHYSICS
- Abstract
- We demonstrated AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) with periodic air-voids-incorporated nanoscale patterns enabled by nanosphere lithography and epitaxial lateral overgrowth (ELO) on a 4-in. sapphire substrate. The nanoscale ELO improved the crystal quality of overgrown epitaxial layers at a relatively low growth temperature of 1050 ��C and at small coalescence thickness less than 2 ��m. The light output power of the DUV LED was enhanced significantly by 67% at an injection current of 20 mA. We attribute such a remarkable enhancement to the formation of embedded periodic air voids which cause simultaneous improvements in the crystal quality of epitaxial layers by ELO and light extraction efficiency enabled by breaking the predominant in-plane guided propagation of DUV photons. ? 2017 Author(s).
- Keywords
- Epitaxial growth; Light; Nanotechnology; Sapphire; Substrates; Superconducting films; Ultraviolet radiation; Deep-ultraviolet light-emitting diodes; Epitaxial lateral overgrowth; Guided propagation; Injection currents; Light-extraction efficiency; Low growth temperature; Nano Sphere Lithography; Nano-scale patterns; Light emitting diodes
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/92103
- DOI
- 10.1063/1.4983283
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 110, no. 19, 2017-05
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.