Atomic layer chemical vapor deposition (ALCVD) of hafnium silicate films for nano CMOS gate dielectric applications
- Title
- Atomic layer chemical vapor deposition (ALCVD) of hafnium silicate films for nano CMOS gate dielectric applications
- Authors
- 이시우
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/91280
- Article Type
- Conference
- Citation
- Korea-Japan Symposium on Materials (O-1)
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- There are no files associated with this item.
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