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Effects of various pre-intrinsic and phosphorus gettering treatments upon quality of neat surface region in CZ silicon wafer during a simulated 4 MB DRAM process
- Title
- Effects of various pre-intrinsic and phosphorus gettering treatments upon quality of neat surface region in CZ silicon wafer during a simulated 4 MB DRAM process
- Authors
- 김오현
- Date Issued
- 1990-05-01
- Article Type
- Conference
- Citation
- The Electro-Chemical Society Meeting, 1990-05-01
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Related Researcher
- 김오현KIM, OHYUN
- Dept of Electrical Enginrg