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Si-delta-doped InxGa1-xAs/Al0.25Ga0.75As (x=0.15-0.28) low noise P-HEMTs grown by LP-MOCVD
- Title
- Si-delta-doped InxGa1-xAs/Al0.25Ga0.75As (x=0.15-0.28) low noise P-HEMTs grown by LP-MOCVD
- Authors
- 정윤하
- Date Issued
- 1994-12-17
- Publisher
- IEEE
- Article Type
- Conference
- Citation
- IEEE Student Paper Contest, Korea Council, Seoul Section, Excellent Student Paper Award, 1994-12-17
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Related Researcher
- 정윤하JEONG, YOON HA
- Dept of Electrical Enginrg