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dc.contributor.author정윤하-
dc.date.accessioned2018-06-22T03:03:04Z-
dc.date.available2018-06-22T03:03:04Z-
dc.date.created2009-03-27-
dc.date.issued1994-12-17-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/86614-
dc.publisherIEEE-
dc.relation.isPartOfIEEE Student Paper Contest, Korea Council, Seoul Section, Excellent Student Paper Award-
dc.relation.isPartOfIEEE Student Paper Contest, Korea Council, Seoul Section, Excellent Student Paper Award-
dc.titleSi-delta-doped InxGa1-xAs/Al0.25Ga0.75As (x=0.15-0.28) low noise P-HEMTs grown by LP-MOCVD-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitationIEEE Student Paper Contest, Korea Council, Seoul Section, Excellent Student Paper Award-
dc.citation.titleIEEE Student Paper Contest, Korea Council, Seoul Section, Excellent Student Paper Award-
dc.contributor.affiliatedAuthor정윤하-
dc.description.journalClass2-
dc.description.journalClass2-

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정윤하JEONG, YOON HA
Dept of Electrical Enginrg
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