Investigation of the formation of polarization-induced 2-dimensional electron gas in AlGaN/GaN heterostructure field effect transistors
- Title
- Investigation of the formation of polarization-induced 2-dimensional electron gas in AlGaN/GaN heterostructure field effect transistors
- Authors
- 이종람
- Publisher
- Denver, USA
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/84272
- Article Type
- Conference
- Citation
- The 4th International Conference on nitride Semiconductors
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.