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dc.contributor.author이종람-
dc.date.accessioned2018-06-21T15:30:06Z-
dc.date.available2018-06-21T15:30:06Z-
dc.date.created2009-03-27-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/84272-
dc.publisherDenver, USA-
dc.relation.isPartOfThe 4th International Conference on nitride Semiconductors-
dc.relation.isPartOfThe 4th International Conference on nitride Semiconductors-
dc.titleInvestigation of the formation of polarization-induced 2-dimensional electron gas in AlGaN/GaN heterostructure field effect transistors-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitationThe 4th International Conference on nitride Semiconductors-
dc.citation.conferenceDate2001-01-01-
dc.citation.titleThe 4th International Conference on nitride Semiconductors-
dc.contributor.affiliatedAuthor이종람-
dc.description.journalClass1-
dc.description.journalClass1-

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이종람LEE, JONG LAM
Dept of Materials Science & Enginrg
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