Saturation Effect for Vth Shift durng the Positive Bias Temperature Instability of HfSiON/SiO2 nMOSFET and Its Impact on Device Life time
- Title
- Saturation Effect for Vth Shift durng the Positive Bias Temperature Instability of HfSiON/SiO2 nMOSFET and Its Impact on Device Life time
- Authors
- 강봉구; 김철규
- Date Issued
- 2013-11-07
- Publisher
- The Japan Society of Applied Physics
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/65516
- Article Type
- Conference
- Citation
- International Workshop on DIELETRIC THIN FILMS FOR FUTURE ELECTRON DEVICES, 2013-11-07
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- There are no files associated with this item.
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