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Saturation Effect for Vth Shift durng the Positive Bias Temperature Instability of HfSiON/SiO2 nMOSFET and Its Impact on Device Life time
- Title
- Saturation Effect for Vth Shift durng the Positive Bias Temperature Instability of HfSiON/SiO2 nMOSFET and Its Impact on Device Life time
- Date Issued
- 2013-11-07
- Publisher
- The Japan Society of Applied Physics
- Article Type
- Conference
- Citation
- International Workshop on DIELETRIC THIN FILMS FOR FUTURE ELECTRON DEVICES, 2013-11-07
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Related Researcher
- 강봉구KANG, BONG KOO
- Dept of Electrical Enginrg