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Saturation Effect for Vth Shift durng the Positive Bias Temperature Instability of HfSiON/SiO2 nMOSFET and Its Impact on Device Life time

Title
Saturation Effect for Vth Shift durng the Positive Bias Temperature Instability of HfSiON/SiO2 nMOSFET and Its Impact on Device Life time
Authors
강봉구김철규
POSTECH Authors
강봉구
Date Issued
7-Nov-2013
Publisher
The Japan Society of Applied Physics
URI
http://oasis.postech.ac.kr/handle/2014.oak/65516
Article Type
Conference
Citation
International Workshop on DIELETRIC THIN FILMS FOR FUTURE ELECTRON DEVICES, 2013-11-07
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강봉구KANG, BONG KOO
Dept of Electrical Enginrg
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