Superior Recovery Characteristics of SiGe pMOSFETs under NBTI Stress
- Title
- Superior Recovery Characteristics of SiGe pMOSFETs under NBTI Stress
- Authors
- 정윤하
- Date Issued
- 2012-09-25
- Publisher
- The Japan Society of Applied Physics
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/63811
- Article Type
- Conference
- Citation
- 2012 International Conference on Solid State Devices and Materials, 2012-09-25
- Files in This Item:
- There are no files associated with this item.
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