Full metadata record
DC Field | Value | Language |
dc.contributor.author | 정윤하 | - |
dc.date.accessioned | 2018-06-18T07:37:36Z | - |
dc.date.available | 2018-06-18T07:37:36Z | - |
dc.date.created | 2013-03-28 | - |
dc.date.issued | 2012-09-25 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/63811 | - |
dc.publisher | The Japan Society of Applied Physics | - |
dc.relation.isPartOf | 2012 International Conference on Solid State Devices and Materials | - |
dc.title | Superior Recovery Characteristics of SiGe pMOSFETs under NBTI Stress | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.identifier.bibliographicCitation | 2012 International Conference on Solid State Devices and Materials | - |
dc.citation.conferencePlace | JA | - |
dc.citation.title | 2012 International Conference on Solid State Devices and Materials | - |
dc.contributor.affiliatedAuthor | 정윤하 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
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