Ultrafast Hot-Carrier Photovoltaics of Type-I Monolayer Heterojunctions in the Broad Spectral Ranges
SCIE
SCOPUS
- Title
- Ultrafast Hot-Carrier Photovoltaics of Type-I Monolayer Heterojunctions in the Broad Spectral Ranges
- Authors
- Sung, J.H.; Cha, S.; Heo, H.; Sim, S.; Kim, J.; Choi, H.; Jo, M.-H.
- Date Issued
- 2017-02
- Publisher
- American Chemical Society
- Abstract
- Strong interlayer photoresponses in monolayer (ML) semiconductor stacks, such as substantial light absorption and charge separation across interlayer band alignments, suggest potentials for two-dimensional photovoltaics (PVs). Here, we report an interlayer PV conversion in a type-I ML heterojunction by ultrafast interlayer transfer of photoexcited hot carriers in the broad spectral ranges. Specifically, low-energy photoexcitation on a stack of a narrow-band-gap (Eg) Bi2Te3 few-layer and a large-Eg MoS2 ML permits interlayer transfer of transient hot carriers from the Bi2Te3 layer to the excitonic states of the neighboring MoS2 ML within a time scale of ��70 fs, producing interlayer charge separation. Thereby we achieve substantial conversion efficiency from a MoS2 ML with visible to infrared light illumination. ? 2017 American Chemical Society.
- Keywords
- Charge transfer; Electromagnetic wave absorption; Energy gap; Heterojunctions; Light absorption; Molybdenum compounds; Monolayers; Narrow band gap semiconductors; Transition metals; Hot carrier injection; Photovoltaics; Transition metal dichalcogenides; Two-dimensional materials; Ultra-fast; Hot carriers
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/50526
- DOI
- 10.1021/acsphotonics.6b00846
- ISSN
- 2330-4022
- Article Type
- Article
- Citation
- ACS Photonics, vol. 4, no. 3, page. 429 - 434, 2017-02
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.