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Cited 7 time in webofscience Cited 7 time in scopus
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dc.contributor.authorSung, J.H.-
dc.contributor.authorCha, S.-
dc.contributor.authorHeo, H.-
dc.contributor.authorSim, S.-
dc.contributor.authorKim, J.-
dc.contributor.authorChoi, H.-
dc.contributor.authorJo, M.-H.-
dc.date.accessioned2018-06-15T05:29:09Z-
dc.date.available2018-06-15T05:29:09Z-
dc.date.created2017-12-21-
dc.date.issued2017-02-
dc.identifier.issn2330-4022-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/50526-
dc.description.abstractStrong interlayer photoresponses in monolayer (ML) semiconductor stacks, such as substantial light absorption and charge separation across interlayer band alignments, suggest potentials for two-dimensional photovoltaics (PVs). Here, we report an interlayer PV conversion in a type-I ML heterojunction by ultrafast interlayer transfer of photoexcited hot carriers in the broad spectral ranges. Specifically, low-energy photoexcitation on a stack of a narrow-band-gap (Eg) Bi2Te3 few-layer and a large-Eg MoS2 ML permits interlayer transfer of transient hot carriers from the Bi2Te3 layer to the excitonic states of the neighboring MoS2 ML within a time scale of ��70 fs, producing interlayer charge separation. Thereby we achieve substantial conversion efficiency from a MoS2 ML with visible to infrared light illumination. ? 2017 American Chemical Society.-
dc.languageEnglish-
dc.publisherAmerican Chemical Society-
dc.relation.isPartOfACS Photonics-
dc.subjectCharge transfer-
dc.subjectElectromagnetic wave absorption-
dc.subjectEnergy gap-
dc.subjectHeterojunctions-
dc.subjectLight absorption-
dc.subjectMolybdenum compounds-
dc.subjectMonolayers-
dc.subjectNarrow band gap semiconductors-
dc.subjectTransition metals-
dc.subjectHot carrier injection-
dc.subjectPhotovoltaics-
dc.subjectTransition metal dichalcogenides-
dc.subjectTwo-dimensional materials-
dc.subjectUltra-fast-
dc.subjectHot carriers-
dc.titleUltrafast Hot-Carrier Photovoltaics of Type-I Monolayer Heterojunctions in the Broad Spectral Ranges-
dc.typeArticle-
dc.identifier.doi10.1021/acsphotonics.6b00846-
dc.type.rimsART-
dc.identifier.bibliographicCitationACS Photonics, v.4, no.3, pp.429 - 434-
dc.identifier.wosid000396808000004-
dc.date.tcdate2019-02-01-
dc.citation.endPage434-
dc.citation.number3-
dc.citation.startPage429-
dc.citation.titleACS Photonics-
dc.citation.volume4-
dc.contributor.affiliatedAuthorJo, M.-H.-
dc.identifier.scopusid2-s2.0-85015366128-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc2-
dc.type.docTypeArticle-
dc.subject.keywordPlusSINGLE-LAYER MOS2-
dc.subject.keywordPlusDER-WAALS HETEROSTRUCTURES-
dc.subject.keywordPlusCHARGE-TRANSFER-
dc.subject.keywordPlusGRAPHENE-
dc.subject.keywordPlusABSORPTION-
dc.subject.keywordPlusEXCITONS-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordPlusPHOTODETECTORS-
dc.subject.keywordPlusDICHALCOGENIDE-
dc.subject.keywordPlusTRANSITION-
dc.subject.keywordAuthortwo-dimensional materials-
dc.subject.keywordAuthorphotovoltaics-
dc.subject.keywordAuthortransition-metal dichalcogenide-
dc.subject.keywordAuthorhot-carrier injection-
dc.subject.keywordAuthorultrafast charge transfer-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryOptics-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaOptics-
dc.relation.journalResearchAreaPhysics-

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