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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 백록현 | - |
| dc.contributor.author | 송승현 | - |
| dc.contributor.author | 김재철 | - |
| dc.contributor.author | 이경택 | - |
| dc.contributor.author | 홍승호 | - |
| dc.contributor.author | 박민상 | - |
| dc.contributor.author | 최길복 | - |
| dc.contributor.author | 최현식 | - |
| dc.contributor.author | 사공현철 | - |
| dc.contributor.author | 정성우 | - |
| dc.contributor.author | 강창용 | - |
| dc.contributor.author | 정윤하 | - |
| dc.date.accessioned | 2018-05-24T11:25:16Z | - |
| dc.date.available | 2018-05-24T11:25:16Z | - |
| dc.date.created | 2017-02-23 | - |
| dc.date.issued | 2008-10-20 | - |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/49493 | - |
| dc.publisher | IEEE | - |
| dc.relation.isPartOf | IEEE Nanotechnology Materials and Devices Conference (NMDC2008) | - |
| dc.relation.isPartOf | IEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE | - |
| dc.title | Gate-Induced Drain Leakage (GIDL) Performance of Strain Engineering using CESL Stressor with High-k gate dielectric | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.identifier.bibliographicCitation | IEEE Nanotechnology Materials and Devices Conference (NMDC2008) | - |
| dc.citation.conferencePlace | JA | - |
| dc.citation.title | IEEE Nanotechnology Materials and Devices Conference (NMDC2008) | - |
| dc.contributor.affiliatedAuthor | 백록현 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
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Related Researcher
- 백록현BAEK, ROCK HYUN
- Dept of Electrical Enginrg