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Low-Frequency Noise Analysis in HfO2/SiON Gate Stack nMOSFETs with Different Interfacial Layer Thickness
- Title
- Low-Frequency Noise Analysis in HfO2/SiON Gate Stack nMOSFETs with Different Interfacial Layer Thickness
- Authors
- 정윤하
- Date Issued
- 2010-07-29
- Publisher
- 한국물리학회, IUPAP (세계물리학 국제연합)
- Article Type
- Conference
- Citation
- International Conference on the Physics of Semiconductors (ICPS), page. 1036 - 1036, 2010-07-29
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Related Researcher
- 정윤하JEONG, YOON HA
- Dept of Electrical Enginrg