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dc.contributor.author정윤하-
dc.date.accessioned2018-05-23T15:50:10Z-
dc.date.available2018-05-23T15:50:10Z-
dc.date.created2010-09-09-
dc.date.issued2010-07-29-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/47116-
dc.publisher한국물리학회, IUPAP (세계물리학 국제연합)-
dc.relation.isPartOfInternational Conference on the Physics of Semiconductors (ICPS)-
dc.relation.isPartOfPROCEEDINGS OF INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS (ICPS)-
dc.titleLow-Frequency Noise Analysis in HfO2/SiON Gate Stack nMOSFETs with Different Interfacial Layer Thickness-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitationInternational Conference on the Physics of Semiconductors (ICPS), pp.1036-
dc.citation.conferenceDate2010-07-25-
dc.citation.conferencePlaceKO-
dc.citation.endPage1036-
dc.citation.startPage1036-
dc.citation.titleInternational Conference on the Physics of Semiconductors (ICPS)-
dc.contributor.affiliatedAuthor정윤하-
dc.description.journalClass1-
dc.description.journalClass1-

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정윤하JEONG, YOON HA
Dept of Electrical Enginrg
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