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Reduction of Base Access Resistance in AlGaN/GaN Heterojunction Bipolar Transistors using GaInN Base Cap Layer and Selective Epitaxial Growth
- Title
- Reduction of Base Access Resistance in AlGaN/GaN Heterojunction Bipolar Transistors using GaInN Base Cap Layer and Selective Epitaxial Growth
- Authors
- 김종규; Jay M. Shah; Y. Xi; Th. Gessmann; E. F. Schubert
- Date Issued
- 2005-11-28
- Publisher
- 2005 Materials Research Society (MRS) Fall meeting
- Article Type
- Conference
- Citation
- 2005 Materials Research Society (MRS) Fall meeting, 2005-11-28
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