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Conference
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dc.contributor.author김종규-
dc.contributor.authorJay M. Shah-
dc.contributor.authorY. Xi-
dc.contributor.authorTh. Gessmann-
dc.contributor.authorE. F. Schubert-
dc.date.accessioned2018-05-23T15:32:48Z-
dc.date.available2018-05-23T15:32:48Z-
dc.date.created2010-06-02-
dc.date.issued2005-11-28-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/46775-
dc.publisher2005 Materials Research Society (MRS) Fall meeting-
dc.relation.isPartOf2005 Materials Research Society (MRS) Fall meeting-
dc.titleReduction of Base Access Resistance in AlGaN/GaN Heterojunction Bipolar Transistors using GaInN Base Cap Layer and Selective Epitaxial Growth-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitation2005 Materials Research Society (MRS) Fall meeting-
dc.citation.conferenceDate2005-11-28-
dc.citation.conferencePlaceUS-
dc.citation.title2005 Materials Research Society (MRS) Fall meeting-
dc.contributor.affiliatedAuthor김종규-
dc.description.journalClass1-
dc.description.journalClass1-

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