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Article
Mechanism for Ohmic contact formation of Ti on n-type GaN investigated using synchrotron radiation photoemission spectroscopySCIESCOPUS

JOURNAL OF APPLIED PHYSICS, vol. 91, no. 11, page. 9214 - 9217, 2002-06-01

Article
Current conduction mechanism of Pt/GaN and Pt/Al0.35Ga0.65N Schottky diodesSCIESCOPUS

JOURNAL OF APPLIED PHYSICS, vol. 94, no. 11, page. 7201 - 7205, 2003-12-01

Article
X-ray photoemission determination of the Schottky barrier height of metal contacts to n-GaN and p-GaNSCIESCOPUS

JOURNAL OF APPLIED PHYSICS, vol. 92, no. 11, page. 6671 - 6678, 2002-12-01

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