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GaAs power MESFET operating at 3.3V drain voltage for digital hand-held phone SCOPUS
- Title
- GaAs power MESFET operating at 3.3V drain voltage for digital hand-held phone
- Authors
- Jong-Lam Lee; Haecheon Kim; Jae Kyung Mun; Ohseung Kwon; Jae Jin Lee; In Duk Hwang; Hyung-Moo Park
- Date Issued
- 1995-01
- Publisher
- ELECTRONICS AND TELECOMMUNICATIONS RE
- Article Type
- Article
- Citation
- ETRI JOURNAL, vol. 16, no. 4, page. 1 - 11, 1995-01
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Related Researcher
- 이종람LEE, JONG LAM
- Dept of Materials Science & Enginrg