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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Jong-Lam Lee | - |
| dc.contributor.author | Haecheon Kim | - |
| dc.contributor.author | Jae Kyung Mun | - |
| dc.contributor.author | Ohseung Kwon | - |
| dc.contributor.author | Jae Jin Lee | - |
| dc.contributor.author | In Duk Hwang | - |
| dc.contributor.author | Hyung-Moo Park | - |
| dc.date.accessioned | 2017-07-31T15:48:37Z | - |
| dc.date.available | 2017-07-31T15:48:37Z | - |
| dc.date.created | 2009-03-26 | - |
| dc.date.issued | 1995-01 | - |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/38375 | - |
| dc.language | English | - |
| dc.publisher | ELECTRONICS AND TELECOMMUNICATIONS RE | - |
| dc.relation.isPartOf | ETRI JOURNAL | - |
| dc.title | GaAs power MESFET operating at 3.3V drain voltage for digital hand-held phone | - |
| dc.type | Article | - |
| dc.identifier.doi | 10.4218/etrij.95.0195.0001 | - |
| dc.type.rims | ART | - |
| dc.identifier.bibliographicCitation | ETRI JOURNAL, v.16, no.4, pp.1 - 11 | - |
| dc.citation.endPage | 11 | - |
| dc.citation.number | 4 | - |
| dc.citation.startPage | 1 | - |
| dc.citation.title | ETRI JOURNAL | - |
| dc.citation.volume | 16 | - |
| dc.contributor.affiliatedAuthor | Jong-Lam Lee | - |
| dc.identifier.scopusid | 2-s2.0-0029203944 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
| dc.type.docType | ARTICLE | - |
| dc.description.journalRegisteredClass | scopus | - |
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Related Researcher
- 이종람LEE, JONG LAM
- Dept of Materials Science & Enginrg