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Topological fate of edge states of single Bi bilayer on Bi(111) SCIE SCOPUS

Title
Topological fate of edge states of single Bi bilayer on Bi(111)
Authors
Yeom, HWJin, KHJhi, SH
Date Issued
2016-02-26
Publisher
AMER PHYSICAL SOC
Abstract
We address the topological nature of electronic states of step edges of Bi(111) films by first-principles band structure calculations. We confirm that the dispersion of step-edge states reflects the topological nature of underlying films, which become topologically trivial at a thickness larger than eight bilayers. This result clearly conflicts with recent claims that the step-edge state at the surface of a bulk Bi(111) crystal or a sufficiently thick Bi(111) film represents nontrivial edge states of the two-dimensional topological insulator phase expected for a very thin Bi(111) film. The trivial step-edge states have a gigantic spin splitting of one-dimensional Rashba bands and substantial intermixing with electronic states of the bulk, which might be exploited further.
URI
https://oasis.postech.ac.kr/handle/2014.oak/29946
DOI
10.1103/PHYSREVB.93.075435
ISSN
2469-9950
Article Type
Article
Citation
PHYSICAL REVIEW B, vol. 93, no. 7, page. 75435, 2016-02-26
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