Topological fate of edge states of single Bi bilayer on Bi(111)
SCIE
SCOPUS
- Title
- Topological fate of edge states of single Bi bilayer on Bi(111)
- Authors
- Yeom, HW; Jin, KH; Jhi, SH
- Date Issued
- 2016-02-26
- Publisher
- AMER PHYSICAL SOC
- Abstract
- We address the topological nature of electronic states of step edges of Bi(111) films by first-principles band structure calculations. We confirm that the dispersion of step-edge states reflects the topological nature of underlying films, which become topologically trivial at a thickness larger than eight bilayers. This result clearly conflicts with recent claims that the step-edge state at the surface of a bulk Bi(111) crystal or a sufficiently thick Bi(111) film represents nontrivial edge states of the two-dimensional topological insulator phase expected for a very thin Bi(111) film. The trivial step-edge states have a gigantic spin splitting of one-dimensional Rashba bands and substantial intermixing with electronic states of the bulk, which might be exploited further.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/29946
- DOI
- 10.1103/PHYSREVB.93.075435
- ISSN
- 2469-9950
- Article Type
- Article
- Citation
- PHYSICAL REVIEW B, vol. 93, no. 7, page. 75435, 2016-02-26
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