DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yeom, HW | - |
dc.contributor.author | Jin, KH | - |
dc.contributor.author | Jhi, SH | - |
dc.date.accessioned | 2016-08-26T07:32:51Z | - |
dc.date.available | 2016-08-26T07:32:51Z | - |
dc.date.created | 2016-05-17 | - |
dc.date.issued | 2016-02-26 | - |
dc.identifier.issn | 2469-9950 | - |
dc.identifier.other | 2016-OAK-0000035688 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/29946 | - |
dc.description.abstract | We address the topological nature of electronic states of step edges of Bi(111) films by first-principles band structure calculations. We confirm that the dispersion of step-edge states reflects the topological nature of underlying films, which become topologically trivial at a thickness larger than eight bilayers. This result clearly conflicts with recent claims that the step-edge state at the surface of a bulk Bi(111) crystal or a sufficiently thick Bi(111) film represents nontrivial edge states of the two-dimensional topological insulator phase expected for a very thin Bi(111) film. The trivial step-edge states have a gigantic spin splitting of one-dimensional Rashba bands and substantial intermixing with electronic states of the bulk, which might be exploited further. | - |
dc.description.statementofresponsibility | open | - |
dc.language | English | - |
dc.publisher | AMER PHYSICAL SOC | - |
dc.relation.isPartOf | PHYSICAL REVIEW B | - |
dc.title | Topological fate of edge states of single Bi bilayer on Bi(111) | - |
dc.type | Article | - |
dc.contributor.college | 물리학과 | - |
dc.identifier.doi | 10.1103/PHYSREVB.93.075435 | - |
dc.author.google | Yeom, HW | - |
dc.author.google | Jin, KH | - |
dc.author.google | Jhi, SH | - |
dc.relation.volume | 93 | - |
dc.relation.issue | 7 | - |
dc.relation.startpage | 75435 | - |
dc.contributor.id | 10136707 | - |
dc.relation.journal | PHYSICAL REVIEW B | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | PHYSICAL REVIEW B, v.93, no.7, pp.75435 | - |
dc.identifier.wosid | 000370841200003 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 75435 | - |
dc.citation.title | PHYSICAL REVIEW B | - |
dc.citation.volume | 93 | - |
dc.contributor.affiliatedAuthor | Yeom, HW | - |
dc.contributor.affiliatedAuthor | Jhi, SH | - |
dc.identifier.scopusid | 2-s2.0-84960154368 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 9 | - |
dc.description.scptc | 6 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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