High Performance of Low Band Gap Polymer-Based Ambipolar Transistor Using Single-Layer Graphene Electrodes
- High Performance of Low Band Gap Polymer-Based Ambipolar Transistor Using Single-Layer Graphene Electrodes
- Choi, JY; Kang, W; Kang, B; Cha, W; Son, SK; Yoon, Y; Kim, H; Kang, Y; Ko, MJ; Son, HJ; Cho, K; Cho, JH; Kim, B
- Date Issued
- AMER CHEMICAL SOC
- Bottom-contact bottom-gate organic field-effect transistors (OFETs) are fabricated using a low band gap pDTTDPP-DT polymer as a channel material and single-layer graphene (SLG) or Au source/drain electrodes. The SLG-DaSed ambipolar OFETs significantly outperform the Au-based ambipolar OFETs, and thermal annealing effectively improves the carrier mobilities of the pDTTDPP-DT :films. The difference is attributed to the following facts: (i) the thermally annealed pDTTDPP-DT chains on the SLG assume more crystalline features with an edge-on orientation as compared to the polymer chains on the Au, (ii) the morphological features of the thermally annealed pDTTDPP-DT films on the SLG electrodes are closer to the features of those on the gate dielectric layer, and (iii) the SLG electrode provides a flatter, more hydrophobic surface that is favorable for the polymer crystallization than the Au. In addition, the preferred carrier transport in each electrode-based OFET is associated With the HOMO/LUMO alignment relative to the Fermi level of the employed electrode. All of these "experimental results consistently explain why the carrier mobilities of the SLG-based OFET are more than 10 times higher than those of the Au-based OTFT. This work demonstrates the strong dependence of ambipolar carrier transport on the source/drain electrode and annealing temperature.
- Article Type
- ACS APPLIED MATERIALS & INTERFACES, vol. 7, no. 10, page. 6002 - 6012, 2015-03-18
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