DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, JY | - |
dc.contributor.author | Kang, W | - |
dc.contributor.author | Kang, B | - |
dc.contributor.author | Cha, W | - |
dc.contributor.author | Son, SK | - |
dc.contributor.author | Yoon, Y | - |
dc.contributor.author | Kim, H | - |
dc.contributor.author | Kang, Y | - |
dc.contributor.author | Ko, MJ | - |
dc.contributor.author | Son, HJ | - |
dc.contributor.author | Cho, K | - |
dc.contributor.author | Cho, JH | - |
dc.contributor.author | Kim, B | - |
dc.date.accessioned | 2016-04-01T07:52:26Z | - |
dc.date.available | 2016-04-01T07:52:26Z | - |
dc.date.created | 2017-02-28 | - |
dc.date.issued | 2015-03-18 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.other | 2015-OAK-0000032836 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/26966 | - |
dc.description.abstract | Bottom-contact bottom-gate organic field-effect transistors (OFETs) are fabricated using a low band gap pDTTDPP-DT polymer as a channel material and single-layer graphene (SLG) or Au source/drain electrodes. The SLG-DaSed ambipolar OFETs significantly outperform the Au-based ambipolar OFETs, and thermal annealing effectively improves the carrier mobilities of the pDTTDPP-DT :films. The difference is attributed to the following facts: (i) the thermally annealed pDTTDPP-DT chains on the SLG assume more crystalline features with an edge-on orientation as compared to the polymer chains on the Au, (ii) the morphological features of the thermally annealed pDTTDPP-DT films on the SLG electrodes are closer to the features of those on the gate dielectric layer, and (iii) the SLG electrode provides a flatter, more hydrophobic surface that is favorable for the polymer crystallization than the Au. In addition, the preferred carrier transport in each electrode-based OFET is associated With the HOMO/LUMO alignment relative to the Fermi level of the employed electrode. All of these "experimental results consistently explain why the carrier mobilities of the SLG-based OFET are more than 10 times higher than those of the Au-based OTFT. This work demonstrates the strong dependence of ambipolar carrier transport on the source/drain electrode and annealing temperature. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.relation.isPartOf | ACS APPLIED MATERIALS & INTERFACES | - |
dc.title | High Performance of Low Band Gap Polymer-Based Ambipolar Transistor Using Single-Layer Graphene Electrodes | - |
dc.type | Article | - |
dc.contributor.college | 화학공학과 | - |
dc.identifier.doi | 10.1021/ACSAMI.5B00747 | - |
dc.author.google | Choi, JY | - |
dc.author.google | Kang, W | - |
dc.author.google | Kang, B | - |
dc.author.google | Cha, W | - |
dc.author.google | Son, SK | - |
dc.author.google | Yoon, Y | - |
dc.author.google | Kim, H | - |
dc.author.google | Kang, Y | - |
dc.author.google | Ko, MJ | - |
dc.author.google | Son, HJ | - |
dc.author.google | Cho, K | - |
dc.author.google | Cho, JH | - |
dc.author.google | Kim, B | - |
dc.relation.volume | 7 | - |
dc.relation.issue | 10 | - |
dc.relation.startpage | 6002 | - |
dc.relation.lastpage | 6012 | - |
dc.contributor.id | 10077904 | - |
dc.relation.journal | ACS APPLIED MATERIALS & INTERFACES | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.7, no.10, pp.6002 - 6012 | - |
dc.identifier.wosid | 000351420300045 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.endPage | 6012 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 6002 | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 7 | - |
dc.contributor.affiliatedAuthor | Cho, K | - |
dc.identifier.scopusid | 2-s2.0-84925372949 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 17 | - |
dc.description.scptc | 16 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | CHARGE-CARRIER MOBILITY | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | HOLE MOBILITIES | - |
dc.subject.keywordPlus | N-CHANNEL | - |
dc.subject.keywordPlus | DIKETOPYRROLOPYRROLE | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | COPOLYMERS | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordAuthor | ambipolar organic field-effect transistor | - |
dc.subject.keywordAuthor | single layer graphene electrode | - |
dc.subject.keywordAuthor | high carrier mobility | - |
dc.subject.keywordAuthor | low band gap polymer | - |
dc.subject.keywordAuthor | film crystallinity | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
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