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Effects of Geometrical Fin Parameters on Transfer Characteristics in Triple-Gate Fin Field Effect Transistors
- Title
- Effects of Geometrical Fin Parameters on Transfer Characteristics in Triple-Gate Fin Field Effect Transistors
- POSTECH Authors
- Kim, O
- Date Issued
- Jun-2009
- Publisher
- INST PURE APPLIED PHYSICS
- Keywords
- THRESHOLD VOLTAGE; MOSFETS; DESIGN
- ISSN
- 0021-4922
- Article Type
- Article
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 48, no. 6, 2009-06
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Related Researcher
- 김오현KIM, OHYUN
- Dept of Electrical Enginrg