Effects of Geometrical Fin Parameters on Transfer Characteristics in Triple-Gate Fin Field Effect Transistors
- Title
- Effects of Geometrical Fin Parameters on Transfer Characteristics in Triple-Gate Fin Field Effect Transistors
- Authors
- Song, JJ; Moon, DH; Kim, O
- POSTECH Authors
- Kim, O
- Date Issued
- Jun-2009
- Publisher
- INST PURE APPLIED PHYSICS
- Keywords
- THRESHOLD VOLTAGE; MOSFETS; DESIGN
- URI
- http://oasis.postech.ac.kr/handle/2014.oak/26123
- DOI
- 10.1143/JJAP.48.06FD09
- ISSN
- 0021-4922
- Article Type
- Article
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 48, no. 6, 2009-06
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.