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Cited 2 time in webofscience Cited 4 time in scopus
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dc.contributor.authorSong, JJko
dc.contributor.authorMoon, DHko
dc.contributor.authorKim, Oko
dc.date.available2016-04-01T03:00:28Z-
dc.date.created2010-04-28-
dc.date.issued2009-06-
dc.identifier.citationJAPANESE JOURNAL OF APPLIED PHYSICS, v.48, no.6-
dc.identifier.issn0021-4922-
dc.identifier.other2009-OAK-0000020921-
dc.identifier.urihttp://oasis.postech.ac.kr/handle/2014.oak/26123-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherINST PURE APPLIED PHYSICS-
dc.subjectTHRESHOLD VOLTAGE-
dc.subjectMOSFETS-
dc.subjectDESIGN-
dc.titleEffects of Geometrical Fin Parameters on Transfer Characteristics in Triple-Gate Fin Field Effect Transistors-
dc.typeArticle-
dc.contributor.college전자전기공학과-
dc.identifier.doi10.1143/JJAP.48.06FD09-
dc.author.googleSong, JJ-
dc.author.googleMoon, DH-
dc.author.googleKim, O-
dc.relation.volume48-
dc.relation.issue6-
dc.contributor.id10087230-
dc.publisher.locationJA-
dc.relation.journalJAPANESE JOURNAL OF APPLIED PHYSICS-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameConference Papers-
dc.type.rimsART-
dc.contributor.localauthorKim, O-
dc.contributor.nonIdAuthorSong, JJ-
dc.contributor.nonIdAuthorMoon, DH-
dc.identifier.wosid000267674600033-
dc.date.tcdate2019-02-01-
dc.citation.number6-
dc.citation.titleJAPANESE JOURNAL OF APPLIED PHYSICS-
dc.citation.volume48-
dc.identifier.scopusid2-s2.0-70249115605-
dc.description.journalClass1-
dc.description.wostc2-
dc.description.scptc4*
dc.date.scptcdate2018-05-121*

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김오현KIM, OHYUN
Dept of Electrical Enginrg
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