Self-Formed Exchange Bias of Switchable Conducting Filaments in NiO Resistive Random Access Memory Capacitors
SCIE
SCOPUS
- Title
- Self-Formed Exchange Bias of Switchable Conducting Filaments in NiO Resistive Random Access Memory Capacitors
- Authors
- Son, JY; Kim, CH; Cho, JH; Shin, YH; Jang, HM
- Date Issued
- 2010-06
- Publisher
- AMER CHEMICAL SOC
- Abstract
- We report on the ferromagnetism of conducting filaments formed in a NiO thin film, which exhibited a typical bistable resistive switching characteristic. The NiO thin film showed an antiferromagnetic hysteresis loop for a high resistive state (R-OFF). However, for a low resistive state (R-ON), the conducting filaments exhibited a ferromagnetic hysteresis loop for the field cooling. The ferromagnetic hysteresis behavior of the R-ON state reveals switchable exchange coupling between the ferromagnetic Ni conducting filaments and the antiferromagnetic NiO layer.
- Keywords
- NiO; conducting filaments; exchange coupling; resistive switching; NANOSTRUCTURES; DEPENDENCE; RESISTANCE; FILMS; FIELD
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/25831
- DOI
- 10.1021/NN100323X
- ISSN
- 1936-0851
- Article Type
- Article
- Citation
- ACS NANO, vol. 4, no. 6, page. 3288 - 3292, 2010-06
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- There are no files associated with this item.
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