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Cited 62 time in webofscience Cited 65 time in scopus
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dc.contributor.authorSon, JY-
dc.contributor.authorKim, CH-
dc.contributor.authorCho, JH-
dc.contributor.authorShin, YH-
dc.contributor.authorJang, HM-
dc.date.accessioned2016-04-01T02:49:38Z-
dc.date.available2016-04-01T02:49:38Z-
dc.date.created2010-09-15-
dc.date.issued2010-06-
dc.identifier.issn1936-0851-
dc.identifier.other2010-OAK-0000021476-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/25831-
dc.description.abstractWe report on the ferromagnetism of conducting filaments formed in a NiO thin film, which exhibited a typical bistable resistive switching characteristic. The NiO thin film showed an antiferromagnetic hysteresis loop for a high resistive state (R-OFF). However, for a low resistive state (R-ON), the conducting filaments exhibited a ferromagnetic hysteresis loop for the field cooling. The ferromagnetic hysteresis behavior of the R-ON state reveals switchable exchange coupling between the ferromagnetic Ni conducting filaments and the antiferromagnetic NiO layer.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherAMER CHEMICAL SOC-
dc.relation.isPartOfACS NANO-
dc.subjectNiO-
dc.subjectconducting filaments-
dc.subjectexchange coupling-
dc.subjectresistive switching-
dc.subjectNANOSTRUCTURES-
dc.subjectDEPENDENCE-
dc.subjectRESISTANCE-
dc.subjectFILMS-
dc.subjectFIELD-
dc.titleSelf-Formed Exchange Bias of Switchable Conducting Filaments in NiO Resistive Random Access Memory Capacitors-
dc.typeArticle-
dc.contributor.college첨단재료과학부-
dc.identifier.doi10.1021/NN100323X-
dc.author.googleSon, JY-
dc.author.googleKim, CH-
dc.author.googleCho, JH-
dc.author.googleShin, YH-
dc.author.googleJang, HM-
dc.relation.volume4-
dc.relation.issue6-
dc.relation.startpage3288-
dc.relation.lastpage3292-
dc.contributor.id10084272-
dc.relation.journalACS NANO-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationACS NANO, v.4, no.6, pp.3288 - 3292-
dc.identifier.wosid000278888600044-
dc.date.tcdate2019-02-01-
dc.citation.endPage3292-
dc.citation.number6-
dc.citation.startPage3288-
dc.citation.titleACS NANO-
dc.citation.volume4-
dc.contributor.affiliatedAuthorSon, JY-
dc.contributor.affiliatedAuthorShin, YH-
dc.contributor.affiliatedAuthorJang, HM-
dc.identifier.scopusid2-s2.0-77955878095-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc44-
dc.description.scptc43*
dc.date.scptcdate2018-05-121*
dc.type.docTypeArticle-
dc.subject.keywordPlusNANOSTRUCTURES-
dc.subject.keywordPlusDEPENDENCE-
dc.subject.keywordPlusRESISTANCE-
dc.subject.keywordPlusFILMS-
dc.subject.keywordPlusFIELD-
dc.subject.keywordAuthorNiO-
dc.subject.keywordAuthorconducting filaments-
dc.subject.keywordAuthorexchange coupling-
dc.subject.keywordAuthorresistive switching-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-

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장현명JANG, HYUN MYUNG
Div of Advanced Materials Science
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