DC Field | Value | Language |
---|---|---|
dc.contributor.author | Son, JY | - |
dc.contributor.author | Kim, CH | - |
dc.contributor.author | Cho, JH | - |
dc.contributor.author | Shin, YH | - |
dc.contributor.author | Jang, HM | - |
dc.date.accessioned | 2016-04-01T02:49:38Z | - |
dc.date.available | 2016-04-01T02:49:38Z | - |
dc.date.created | 2010-09-15 | - |
dc.date.issued | 2010-06 | - |
dc.identifier.issn | 1936-0851 | - |
dc.identifier.other | 2010-OAK-0000021476 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/25831 | - |
dc.description.abstract | We report on the ferromagnetism of conducting filaments formed in a NiO thin film, which exhibited a typical bistable resistive switching characteristic. The NiO thin film showed an antiferromagnetic hysteresis loop for a high resistive state (R-OFF). However, for a low resistive state (R-ON), the conducting filaments exhibited a ferromagnetic hysteresis loop for the field cooling. The ferromagnetic hysteresis behavior of the R-ON state reveals switchable exchange coupling between the ferromagnetic Ni conducting filaments and the antiferromagnetic NiO layer. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.relation.isPartOf | ACS NANO | - |
dc.subject | NiO | - |
dc.subject | conducting filaments | - |
dc.subject | exchange coupling | - |
dc.subject | resistive switching | - |
dc.subject | NANOSTRUCTURES | - |
dc.subject | DEPENDENCE | - |
dc.subject | RESISTANCE | - |
dc.subject | FILMS | - |
dc.subject | FIELD | - |
dc.title | Self-Formed Exchange Bias of Switchable Conducting Filaments in NiO Resistive Random Access Memory Capacitors | - |
dc.type | Article | - |
dc.contributor.college | 첨단재료과학부 | - |
dc.identifier.doi | 10.1021/NN100323X | - |
dc.author.google | Son, JY | - |
dc.author.google | Kim, CH | - |
dc.author.google | Cho, JH | - |
dc.author.google | Shin, YH | - |
dc.author.google | Jang, HM | - |
dc.relation.volume | 4 | - |
dc.relation.issue | 6 | - |
dc.relation.startpage | 3288 | - |
dc.relation.lastpage | 3292 | - |
dc.contributor.id | 10084272 | - |
dc.relation.journal | ACS NANO | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | ACS NANO, v.4, no.6, pp.3288 - 3292 | - |
dc.identifier.wosid | 000278888600044 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.endPage | 3292 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 3288 | - |
dc.citation.title | ACS NANO | - |
dc.citation.volume | 4 | - |
dc.contributor.affiliatedAuthor | Son, JY | - |
dc.contributor.affiliatedAuthor | Shin, YH | - |
dc.contributor.affiliatedAuthor | Jang, HM | - |
dc.identifier.scopusid | 2-s2.0-77955878095 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 44 | - |
dc.description.scptc | 43 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | NANOSTRUCTURES | - |
dc.subject.keywordPlus | DEPENDENCE | - |
dc.subject.keywordPlus | RESISTANCE | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | FIELD | - |
dc.subject.keywordAuthor | NiO | - |
dc.subject.keywordAuthor | conducting filaments | - |
dc.subject.keywordAuthor | exchange coupling | - |
dc.subject.keywordAuthor | resistive switching | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
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