Photon-stimulated H desorption from several H/Si(001) surfaces for resistless lithography
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- Title
- Photon-stimulated H desorption from several H/Si(001) surfaces for resistless lithography
- Authors
- Jeon, C; Park, CY; Hwang, CC; Hwang, HN; Song, HJ; Shin, HJ; Moon, SW; Chung, SM
- Date Issued
- 2007-06
- Publisher
- KOREAN PHYSICAL SOC
- Abstract
- Synchrotron radiation photoemission spectroscopy (SRPES) and scanning photoelectron microscopy (SPEM) have been used to investigate photon-stimulated H desorption from several H-terminated Si(001) surfaces for resistless lithography. H was desorbed from a well-defined Si(001)2x1:H surface upon unmonochromatized photon irradiation, but monochromatic photons (100 similar to 650 eV) did not break H-Si bonds regardless of the incident photon flux per unit area. Photons of similar to 7.9 eV or secondary electrons might induce H desorption upon unmonochromatized photon irradiation. On the other hand, contaminated H/Si(001) surfaces were affected by extreme ultraviolet (EUV) (11.8 nm) irradiation. Here, we demonstrate that minute patterns can be formed through the photochemical reaction.
- Keywords
- PES; SPEM; PSD; resistless lithography; EUV; SCANNING-TUNNELING-MICROSCOPY; SI(100) SURFACES; SI(001) SURFACES; UHV-STM; HYDROGEN; ADSORPTION; EXCITATION; MONOHYDRIDE
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/23331
- DOI
- 10.3938/jkps.50.1745
- ISSN
- 0374-4884
- Article Type
- Article
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, vol. 50, no. 6, page. 1745 - 1749, 2007-06
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