High performance thin film transistor with low temperature atomic layer deposition nitrogen-doped ZnO
SCIE
SCOPUS
- Title
- High performance thin film transistor with low temperature atomic layer deposition nitrogen-doped ZnO
- Authors
- Lim, SJ; Kwon, SJ; Kim, H; Park, JS
- Date Issued
- 2007-10-29
- Publisher
- AMER INST PHYSICS
- Abstract
- High performance thin film transistor (TFT) with atomic layer deposition (ALD) nitrogen doped ZnO (ZnO:N) as an active layer is demonstrated. The electrical properties of ZnO thin films were effectively controlled by in situ nitrogen doping using NH4OH as a source for reactants. Especially, the electron concentration in ZnO was lowered to below 10(15) cm(-3). Good device characteristics were obtained from the inverted staggered type TFTs with ZnO:N channel and ALD Al2O3 gate insulator; mu(sat)=6.7 cm(2)/V s, I-off=2.03x10(-12) A, I-on/off=9.46x10(7), and subthreshold swing=0.67 V/decade. The entire TFT fabrication processes were carried out at below 150 degrees C, which is a favorable process for plastic based flexible display. (C) 2007 American Institute of Physics.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/23090
- DOI
- 10.1063/1.2803219
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 91, no. 18, 2007-10-29
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