Morphology transformation of patterned, uniform and faceted GaN microcrystals
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- Title
- Morphology transformation of patterned, uniform and faceted GaN microcrystals
- Authors
- Kim, TW; Hong, YJ; Yi, GC; Kwon, JH; Kim, M; Han, HN; Kim, DH; Oh, KH; Kong, KJ; Kwon, YK
- Date Issued
- 2008-01-07
- Publisher
- IOP PUBLISHING LTD
- Abstract
- We report on the growth and characterization of patterned and uniformly distributed GaN microcrystals with well-defined facets and epitaxy. The microcrystals were grown on a mask patterned by lithography. The GaN microcrystals were formed by selective-area epitaxy using metal-organic chemical-vapour deposition. The GaN microcrystals have similar sizes and shapes. Each microcrystal consists of an upper and a lower part, which are rotated by 30 degrees. Transmission electron microscopy shows that there is a rather clear interface between the two parts of the crystal, suggesting a sudden change in the growth direction. We performed ab initio calculations for the surface energies of hexagonal GaN, and the growth morphology is explained based on surface energy considerations.
- Keywords
- TOTAL-ENERGY CALCULATIONS; GROWTH; PSEUDOPOTENTIALS; NANOCRYSTALS; NANOBELTS; NANOWIRES
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/22922
- DOI
- 10.1088/0022-3727/41/1/015406
- ISSN
- 0022-3727
- Article Type
- Article
- Citation
- JOURNAL OF PHYSICS D-APPLIED PHYSICS, vol. 41, no. 1, 2008-01-07
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