DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, TW | - |
dc.contributor.author | Hong, YJ | - |
dc.contributor.author | Yi, GC | - |
dc.contributor.author | Kwon, JH | - |
dc.contributor.author | Kim, M | - |
dc.contributor.author | Han, HN | - |
dc.contributor.author | Kim, DH | - |
dc.contributor.author | Oh, KH | - |
dc.contributor.author | Kong, KJ | - |
dc.contributor.author | Kwon, YK | - |
dc.date.accessioned | 2016-04-01T01:26:08Z | - |
dc.date.available | 2016-04-01T01:26:08Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2008-01-07 | - |
dc.identifier.issn | 0022-3727 | - |
dc.identifier.other | 2008-OAK-0000007520 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/22922 | - |
dc.description.abstract | We report on the growth and characterization of patterned and uniformly distributed GaN microcrystals with well-defined facets and epitaxy. The microcrystals were grown on a mask patterned by lithography. The GaN microcrystals were formed by selective-area epitaxy using metal-organic chemical-vapour deposition. The GaN microcrystals have similar sizes and shapes. Each microcrystal consists of an upper and a lower part, which are rotated by 30 degrees. Transmission electron microscopy shows that there is a rather clear interface between the two parts of the crystal, suggesting a sudden change in the growth direction. We performed ab initio calculations for the surface energies of hexagonal GaN, and the growth morphology is explained based on surface energy considerations. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.relation.isPartOf | JOURNAL OF PHYSICS D-APPLIED PHYSICS | - |
dc.subject | TOTAL-ENERGY CALCULATIONS | - |
dc.subject | GROWTH | - |
dc.subject | PSEUDOPOTENTIALS | - |
dc.subject | NANOCRYSTALS | - |
dc.subject | NANOBELTS | - |
dc.subject | NANOWIRES | - |
dc.title | Morphology transformation of patterned, uniform and faceted GaN microcrystals | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1088/0022-3727/41/1/015406 | - |
dc.author.google | Kim, Tae Woong | - |
dc.author.google | Hong, Young Joon | - |
dc.author.google | Yi, Gyu-Chul | - |
dc.author.google | Kwon, Ji-Hwan | - |
dc.author.google | Kim, Miyoung | - |
dc.author.google | Han, Heung Nam | - |
dc.author.google | Kim, Do | - |
dc.relation.volume | 41 | - |
dc.relation.issue | 1 | - |
dc.relation.journal | JOURNAL OF PHYSICS D-APPLIED PHYSICS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.41, no.1 | - |
dc.identifier.wosid | 000253177300039 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.number | 1 | - |
dc.citation.title | JOURNAL OF PHYSICS D-APPLIED PHYSICS | - |
dc.citation.volume | 41 | - |
dc.contributor.affiliatedAuthor | Yi, GC | - |
dc.identifier.scopusid | 2-s2.0-38549164348 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 6 | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | TOTAL-ENERGY CALCULATIONS | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | PSEUDOPOTENTIALS | - |
dc.subject.keywordPlus | NANOCRYSTALS | - |
dc.subject.keywordPlus | NANOBELTS | - |
dc.subject.keywordPlus | NANOWIRES | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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