Open Access System for Information Sharing

Login Library

 

Article
Cited 7 time in webofscience Cited 6 time in scopus
Metadata Downloads
Full metadata record
Files in This Item:
There are no files associated with this item.
DC FieldValueLanguage
dc.contributor.authorKim, TW-
dc.contributor.authorHong, YJ-
dc.contributor.authorYi, GC-
dc.contributor.authorKwon, JH-
dc.contributor.authorKim, M-
dc.contributor.authorHan, HN-
dc.contributor.authorKim, DH-
dc.contributor.authorOh, KH-
dc.contributor.authorKong, KJ-
dc.contributor.authorKwon, YK-
dc.date.accessioned2016-04-01T01:26:08Z-
dc.date.available2016-04-01T01:26:08Z-
dc.date.created2009-02-28-
dc.date.issued2008-01-07-
dc.identifier.issn0022-3727-
dc.identifier.other2008-OAK-0000007520-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/22922-
dc.description.abstractWe report on the growth and characterization of patterned and uniformly distributed GaN microcrystals with well-defined facets and epitaxy. The microcrystals were grown on a mask patterned by lithography. The GaN microcrystals were formed by selective-area epitaxy using metal-organic chemical-vapour deposition. The GaN microcrystals have similar sizes and shapes. Each microcrystal consists of an upper and a lower part, which are rotated by 30 degrees. Transmission electron microscopy shows that there is a rather clear interface between the two parts of the crystal, suggesting a sudden change in the growth direction. We performed ab initio calculations for the surface energies of hexagonal GaN, and the growth morphology is explained based on surface energy considerations.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherIOP PUBLISHING LTD-
dc.relation.isPartOfJOURNAL OF PHYSICS D-APPLIED PHYSICS-
dc.subjectTOTAL-ENERGY CALCULATIONS-
dc.subjectGROWTH-
dc.subjectPSEUDOPOTENTIALS-
dc.subjectNANOCRYSTALS-
dc.subjectNANOBELTS-
dc.subjectNANOWIRES-
dc.titleMorphology transformation of patterned, uniform and faceted GaN microcrystals-
dc.typeArticle-
dc.contributor.college신소재공학과-
dc.identifier.doi10.1088/0022-3727/41/1/015406-
dc.author.googleKim, Tae Woong-
dc.author.googleHong, Young Joon-
dc.author.googleYi, Gyu-Chul-
dc.author.googleKwon, Ji-Hwan-
dc.author.googleKim, Miyoung-
dc.author.googleHan, Heung Nam-
dc.author.googleKim, Do-
dc.relation.volume41-
dc.relation.issue1-
dc.relation.journalJOURNAL OF PHYSICS D-APPLIED PHYSICS-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationJOURNAL OF PHYSICS D-APPLIED PHYSICS, v.41, no.1-
dc.identifier.wosid000253177300039-
dc.date.tcdate2019-01-01-
dc.citation.number1-
dc.citation.titleJOURNAL OF PHYSICS D-APPLIED PHYSICS-
dc.citation.volume41-
dc.contributor.affiliatedAuthorYi, GC-
dc.identifier.scopusid2-s2.0-38549164348-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc6-
dc.type.docTypeArticle-
dc.subject.keywordPlusTOTAL-ENERGY CALCULATIONS-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordPlusPSEUDOPOTENTIALS-
dc.subject.keywordPlusNANOCRYSTALS-
dc.subject.keywordPlusNANOBELTS-
dc.subject.keywordPlusNANOWIRES-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

qr_code

  • mendeley

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher

이규철YI, GYU CHUL
Dept of Materials Science & Enginrg
Read more

Views & Downloads

Browse