On the RF Series Resistance Extraction of Nanoscale MOSFETs

Abstract

A new extraction method of series resistance based on the radio frequency S-parameter measurement for sub -0.1 mu m, metal oxide semiconductor field-effect transistor is presented. The practical limit of conventional methods is analyzed from measurement and simulation. From this analysis, analytical expressions are derived, and linear regression techniques are used to extract the series resistances. The proposed method improves the accuracy and reduces the measurement frequency.