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Cited 10 time in webofscience Cited 12 time in scopus
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dc.contributor.authorChoi, GB-
dc.contributor.authorHong, SH-
dc.contributor.authorJung, SW-
dc.contributor.authorJeong, YH-
dc.date.accessioned2016-04-01T01:07:32Z-
dc.date.available2016-04-01T01:07:32Z-
dc.date.created2009-08-05-
dc.date.issued2008-10-
dc.identifier.issn1531-1309-
dc.identifier.other2008-OAK-0000008248-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/22441-
dc.description.abstractA new extraction method of series resistance based on the radio frequency S-parameter measurement for sub -0.1 mu m, metal oxide semiconductor field-effect transistor is presented. The practical limit of conventional methods is analyzed from measurement and simulation. From this analysis, analytical expressions are derived, and linear regression techniques are used to extract the series resistances. The proposed method improves the accuracy and reduces the measurement frequency.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGI-
dc.relation.isPartOfIEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS-
dc.subjectExtraction-
dc.subjectmodeling-
dc.subjectmetal oxide semiconductor field-effect transistor (MOSFET)-
dc.subjectradio frequency (RF)-
dc.subjectseries resistance-
dc.subjectsmall signal-
dc.subjectIC DESIGN-
dc.subjectPARAMETERS-
dc.titleOn the RF Series Resistance Extraction of Nanoscale MOSFETs-
dc.typeArticle-
dc.contributor.college전자전기공학과-
dc.identifier.doi10.1109/LMWC.2008.2003472-
dc.author.googleChoi, GB-
dc.author.googleHong, SH-
dc.author.googleJung, SW-
dc.author.googleJeong, YH-
dc.relation.volume18-
dc.relation.issue10-
dc.relation.startpage689-
dc.relation.lastpage691-
dc.contributor.id10106021-
dc.relation.journalIEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationIEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.18, no.10, pp.689 - 691-
dc.identifier.wosid000260219700013-
dc.date.tcdate2019-01-01-
dc.citation.endPage691-
dc.citation.number10-
dc.citation.startPage689-
dc.citation.titleIEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS-
dc.citation.volume18-
dc.contributor.affiliatedAuthorJeong, YH-
dc.identifier.scopusid2-s2.0-54049130514-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc9-
dc.type.docTypeArticle-
dc.subject.keywordAuthorExtraction-
dc.subject.keywordAuthormodeling-
dc.subject.keywordAuthormetal oxide semiconductor field-effect transistor (MOSFET)-
dc.subject.keywordAuthorradio frequency (RF)-
dc.subject.keywordAuthorseries resistance-
dc.subject.keywordAuthorsmall signal-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-

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정윤하JEONG, YOON HA
Dept of Electrical Enginrg
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