EFFECTS OF SULFIDE TREATMENT ON INP METAL-INSULATOR-SEMICONDUCTOR DEVICES WITH PHOTOCHEMICAL VAPOR DEPOSIT P3N5 GATE INSULATORS
- Title
- EFFECTS OF SULFIDE TREATMENT ON INP METAL-INSULATOR-SEMICONDUCTOR DEVICES WITH PHOTOCHEMICAL VAPOR DEPOSIT P3N5 GATE INSULATORS
- Authors
- JEONG, YH; LEE, BH; JO, SK; JEONG, MY; SUGANO, T
- POSTECH Authors
- JEONG, YH
- Date Issued
- Oct-1995
- Publisher
- JAPAN J APPLIED PHYSICS
- Keywords
- SULFIDE TREATMENT; PHOTO-CVD; DEPLETION MODE INP MISFET; POWER DEVICE; ELECTRICAL CHARACTERISTICS; NITRIDE; PASSIVATION; INTERFACE; SURFACES; SULFUR
- URI
- http://oasis.postech.ac.kr/handle/2014.oak/21704
- ISSN
- 0021-4922
- Article Type
- Article
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, vol. 34, no. 10B, 1995-10
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- There are no files associated with this item.
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