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dc.contributor.authorJEONG, YHko
dc.contributor.authorLEE, BHko
dc.contributor.authorJO, SKko
dc.contributor.authorJEONG, MYko
dc.contributor.authorSUGANO, Tko
dc.date.available2016-03-31T14:26:01Z-
dc.date.created2009-08-05-
dc.date.issued1995-10-
dc.identifier.citationJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.34, no.10B-
dc.identifier.issn0021-4922-
dc.identifier.other1995-OAK-0000009250-
dc.identifier.urihttp://oasis.postech.ac.kr/handle/2014.oak/21704-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherJAPAN J APPLIED PHYSICS-
dc.subjectSULFIDE TREATMENT-
dc.subjectPHOTO-CVD-
dc.subjectDEPLETION MODE INP MISFET-
dc.subjectPOWER DEVICE-
dc.subjectELECTRICAL CHARACTERISTICS-
dc.subjectNITRIDE-
dc.subjectPASSIVATION-
dc.subjectINTERFACE-
dc.subjectSURFACES-
dc.subjectSULFUR-
dc.titleEFFECTS OF SULFIDE TREATMENT ON INP METAL-INSULATOR-SEMICONDUCTOR DEVICES WITH PHOTOCHEMICAL VAPOR DEPOSIT P3N5 GATE INSULATORS-
dc.typeArticle-
dc.contributor.college전자전기공학과-
dc.author.googleJEONG, YH-
dc.author.googleLEE, BH-
dc.author.googleJO, SK-
dc.author.googleJEONG, MY-
dc.author.googleSUGANO, T-
dc.relation.volume34-
dc.relation.issue10B-
dc.contributor.id10106021-
dc.publisher.locationJA-
dc.relation.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.contributor.localauthorJEONG, YH-
dc.contributor.nonIdAuthorLEE, BH-
dc.contributor.nonIdAuthorJO, SK-
dc.contributor.nonIdAuthorJEONG, MY-
dc.contributor.nonIdAuthorSUGANO, T-
dc.identifier.wosidA1995TB62200005-
dc.date.tcdate2018-03-23-
dc.citation.number10B-
dc.citation.titleJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS-
dc.citation.volume34-
dc.identifier.scopusid2-S2.0-0029390857-
dc.description.journalClass1-

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정윤하JEONG, YOON HA
Dept of Electrical Enginrg
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