PHYSICAL PROPERTIES OF THE BA-ADSORBED SI(111) SURFACE AT ELEVATED TEMPERATURES
SCIE
SCOPUS
- Title
- PHYSICAL PROPERTIES OF THE BA-ADSORBED SI(111) SURFACE AT ELEVATED TEMPERATURES
- Authors
- Ahn, JR; Kim, HW; Lee, KD; Chung, JW
- Date Issued
- 2000-10
- Publisher
- SPRINGER-VERLAG
- Abstract
- We have investigated the adsorption of Ba on the Si(111) surface at elevated temperatures by using high-resolution electron-energy-loss spectroscopy, low-energy-electron diffraction, and photoelectron spectroscopy with synchrotron photons. We found two new ordered phases 2 x 1a and 2 x 1b with increasing Ba coverage in addition to other ordered phases reported earlier. All the ordered surfaces were found to remain semiconducting with a hybridization band gap of similar to 1.1 eV almost independent of Ba coverage. We discuss evidence for the evolution of a Ba s - s hybridization band for Ba coverage beyond 0.5 monolayers and propose structural models for the three ordered phases, which are quite consistent with our experimental data.
- Keywords
- ELECTRONIC-STRUCTURE; GAAS(110); TRANSITION; INTERFACE; METALS; STATE
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/19843
- DOI
- 10.1007/s003390000584
- ISSN
- 0947-8396
- Article Type
- Article
- Citation
- APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, vol. 71, no. 4, page. 461 - 464, 2000-10
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.