DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ahn, JR | - |
dc.contributor.author | Kim, HW | - |
dc.contributor.author | Lee, KD | - |
dc.contributor.author | Chung, JW | - |
dc.date.accessioned | 2016-03-31T13:26:47Z | - |
dc.date.available | 2016-03-31T13:26:47Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2000-10 | - |
dc.identifier.issn | 0947-8396 | - |
dc.identifier.other | 2000-OAK-0000001563 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/19843 | - |
dc.description.abstract | We have investigated the adsorption of Ba on the Si(111) surface at elevated temperatures by using high-resolution electron-energy-loss spectroscopy, low-energy-electron diffraction, and photoelectron spectroscopy with synchrotron photons. We found two new ordered phases 2 x 1a and 2 x 1b with increasing Ba coverage in addition to other ordered phases reported earlier. All the ordered surfaces were found to remain semiconducting with a hybridization band gap of similar to 1.1 eV almost independent of Ba coverage. We discuss evidence for the evolution of a Ba s - s hybridization band for Ba coverage beyond 0.5 monolayers and propose structural models for the three ordered phases, which are quite consistent with our experimental data. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | SPRINGER-VERLAG | - |
dc.relation.isPartOf | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | - |
dc.subject | ELECTRONIC-STRUCTURE | - |
dc.subject | GAAS(110) | - |
dc.subject | TRANSITION | - |
dc.subject | INTERFACE | - |
dc.subject | METALS | - |
dc.subject | STATE | - |
dc.title | PHYSICAL PROPERTIES OF THE BA-ADSORBED SI(111) SURFACE AT ELEVATED TEMPERATURES | - |
dc.type | Article | - |
dc.contributor.college | 물리학과 | - |
dc.identifier.doi | 10.1007/s003390000584 | - |
dc.author.google | Ahn, JR | - |
dc.author.google | Kim, HW | - |
dc.author.google | Lee, KD | - |
dc.author.google | Chung, JW | - |
dc.relation.volume | 71 | - |
dc.relation.issue | 4 | - |
dc.relation.startpage | 461 | - |
dc.relation.lastpage | 464 | - |
dc.contributor.id | 10052578 | - |
dc.relation.journal | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, v.71, no.4, pp.461 - 464 | - |
dc.identifier.wosid | 000089602100013 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 464 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 461 | - |
dc.citation.title | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | - |
dc.citation.volume | 71 | - |
dc.contributor.affiliatedAuthor | Chung, JW | - |
dc.identifier.scopusid | 2-s2.0-0034288113 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 4 | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | ELECTRONIC-STRUCTURE | - |
dc.subject.keywordPlus | GAAS(110) | - |
dc.subject.keywordPlus | TRANSITION | - |
dc.subject.keywordPlus | INTERFACE | - |
dc.subject.keywordPlus | METALS | - |
dc.subject.keywordPlus | STATE | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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