Microstructure of GaN nucleation layer during initial stage MOCVD growth
SCIE
SCOPUS
- Title
- Microstructure of GaN nucleation layer during initial stage MOCVD growth
- Authors
- Kim, CC; Je, JH; Yi, MS; Noh, DY; Degave, F; Ruterana, P
- Date Issued
- 2001-05-22
- Publisher
- ELSEVIER SCIENCE SA
- Abstract
- The microstructure in GaN nucleation layers was studied in synchrotron X-ray scattering and transmission electron microscopy experiments. We revealed the existence of tensile-strained interfacial domains, which was originated from 6/7 matched interface structure. (C) 2001 Elsevier Science S.A. All rights reserved.
- Keywords
- GaN; nucleation layer; microstructure; tensile strain; interface structure; LIGHT-EMITTING-DIODES; X-RAY-SCATTERING; BLUE; EPITAXY
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/19546
- DOI
- 10.1016/S0921-5107(00)00757-1
- ISSN
- 0921-5107
- Article Type
- Article
- Citation
- MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, vol. 82, no. 1-3, page. 108 - 110, 2001-05-22
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