Article
Cited 1 time in 
Cited 2 time in 
Cited 2 time in
Metadata Downloads
Microstructure of GaN nucleation layer during initial stage MOCVD growth SCIE SCOPUS
- Title
- Microstructure of GaN nucleation layer during initial stage MOCVD growth
- Date Issued
- 2001-05-22
- Publisher
- ELSEVIER SCIENCE SA
- Abstract
- The microstructure in GaN nucleation layers was studied in synchrotron X-ray scattering and transmission electron microscopy experiments. We revealed the existence of tensile-strained interfacial domains, which was originated from 6/7 matched interface structure. (C) 2001 Elsevier Science S.A. All rights reserved.
- Keywords
- GaN; nucleation layer; microstructure; tensile strain; interface structure; LIGHT-EMITTING-DIODES; X-RAY-SCATTERING; BLUE; EPITAXY
- ISSN
- 0921-5107
- Article Type
- Article
- Citation
- MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, vol. 82, no. 1-3, page. 108 - 110, 2001-05-22
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
Communities & Collection
Related Researcher
- 제정호JE, JUNG HO
- Dept of Materials Science & Enginrg