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  Department of Materials Science & Engineering (신소재공학과) 1. Journal Papers

 

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Cited 1 time in webofscience Cited 2 time in scopus
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dc.contributor.authorKim, CC-
dc.contributor.authorJe, JH-
dc.contributor.authorYi, MS-
dc.contributor.authorNoh, DY-
dc.contributor.authorDegave, F-
dc.contributor.authorRuterana, P-
dc.date.accessioned2016-03-31T13:18:49Z-
dc.date.available2016-03-31T13:18:49Z-
dc.date.created2009-02-28-
dc.date.issued2001-05-22-
dc.identifier.issn0921-5107-
dc.identifier.other2001-OAK-0000001992-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/19546-
dc.description.abstractThe microstructure in GaN nucleation layers was studied in synchrotron X-ray scattering and transmission electron microscopy experiments. We revealed the existence of tensile-strained interfacial domains, which was originated from 6/7 matched interface structure. (C) 2001 Elsevier Science S.A. All rights reserved.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherELSEVIER SCIENCE SA-
dc.relation.isPartOfMATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY-
dc.subjectGaN-
dc.subjectnucleation layer-
dc.subjectmicrostructure-
dc.subjecttensile strain-
dc.subjectinterface structure-
dc.subjectLIGHT-EMITTING-DIODES-
dc.subjectX-RAY-SCATTERING-
dc.subjectBLUE-
dc.subjectEPITAXY-
dc.titleMicrostructure of GaN nucleation layer during initial stage MOCVD growth-
dc.typeArticle-
dc.contributor.college신소재공학과-
dc.identifier.doi10.1016/S0921-5107(00)00757-1-
dc.author.googleKim, CC-
dc.author.googleJe, JH-
dc.author.googleYi, MS-
dc.author.googleNoh, DY-
dc.author.googleDegave, F-
dc.author.googleRuterana, P-
dc.relation.volume82-
dc.relation.issue1-3-
dc.relation.startpage108-
dc.relation.lastpage110-
dc.contributor.id10123980-
dc.relation.journalMATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameConference Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationMATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, v.82, no.1-3, pp.108 - 110-
dc.identifier.wosid000168618700032-
dc.date.tcdate2019-01-01-
dc.citation.endPage110-
dc.citation.number1-3-
dc.citation.startPage108-
dc.citation.titleMATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY-
dc.citation.volume82-
dc.contributor.affiliatedAuthorJe, JH-
dc.identifier.scopusid2-s2.0-0035933185-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc1-
dc.type.docTypeArticle; Proceedings Paper-
dc.subject.keywordPlusLIGHT-EMITTING-DIODES-
dc.subject.keywordPlusX-RAY-SCATTERING-
dc.subject.keywordPlusBLUE-
dc.subject.keywordPlusEPITAXY-
dc.subject.keywordAuthorGaN-
dc.subject.keywordAuthornucleation layer-
dc.subject.keywordAuthormicrostructure-
dc.subject.keywordAuthortensile strain-
dc.subject.keywordAuthorinterface structure-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
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제정호JE, JUNG HO
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