SrTiO3 homoepitaxy by the pulsed laser deposition method: island, layer-by-layer, and step-flow growth
SCIE
SCOPUS
- Title
- SrTiO3 homoepitaxy by the pulsed laser deposition method: island, layer-by-layer, and step-flow growth
- Authors
- Song, JH; Jeong, YH
- Date Issued
- 2003-03
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Abstract
- SrTiO3 homoepitaxy was investigated under various conditions using the pulsed laser deposition method. The growth mode was determined by in-situ reflection high-energy electron diffraction, and the surface of the films was characterized by ex-situ 2 atomic force microscopy. At the laser fluence of 0.68 J/cm(2), island growth was observed below 500degreesC substrate temperature, while the growth mode turned into layer-by-layer growth above 500degreesC. On further raising the substrate temperature, the step-flow growth mode prevailed above 800degreesC. We thus demonstrated that step-flow growth in SrTiO3 homoepitaxy is possible at a temperature as low as 800degreesC. (C) 2003 Elsevier Science Ltd. All rights reserved.
- Keywords
- crystal growth; epitaxy; laser processing; reflection high-energy electron diffraction; THIN-FILMS; SURFACE
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/18642
- DOI
- 10.1016/S0038-1098(03)00005-X
- ISSN
- 0038-1098
- Article Type
- Article
- Citation
- SOLID STATE COMMUNICATIONS, vol. 125, no. 10, page. 563 - 566, 2003-03
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- There are no files associated with this item.
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