SrTiO3 homoepitaxy by the pulsed laser deposition method: island, layer-by-layer, and step-flow growth

Abstract

SrTiO3 homoepitaxy was investigated under various conditions using the pulsed laser deposition method. The growth mode was determined by in-situ reflection high-energy electron diffraction, and the surface of the films was characterized by ex-situ 2 atomic force microscopy. At the laser fluence of 0.68 J/cm(2), island growth was observed below 500degreesC substrate temperature, while the growth mode turned into layer-by-layer growth above 500degreesC. On further raising the substrate temperature, the step-flow growth mode prevailed above 800degreesC. We thus demonstrated that step-flow growth in SrTiO3 homoepitaxy is possible at a temperature as low as 800degreesC. (C) 2003 Elsevier Science Ltd. All rights reserved.