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Formation of oxygen-induced Si(113)-3 x 2 facets on the Si(5512) surface SCIE SCOPUS

Title
Formation of oxygen-induced Si(113)-3 x 2 facets on the Si(5512) surface
Authors
Lee, SSSong, HJChung, JW
Date Issued
2003-06-01
Publisher
ELSEVIER SCIENCE BV
Abstract
We report the formation of Si(1 1 3)-3 x 2 facets upon exposing oxygens on the Si(5 5 12) surface at an elevated temperature. These facets are found to form only for a limited range of oxygen exposure and exhibit a well-defined 3 x 2 LEED pattern. We also find the surface electronic state unique only to the facets in the valence band. The spectral feature of these electronic states and the behavior of a (1/3 1/2) LEED spot upon oxygen contents in the facets indicate that the formation is a heterogeneous mixture of the clean Si(1 1 3) facets free of oxygens and other facets containing oxygen atoms. (C) 2003 Elsevier Science B.V. All rights reserved.
Keywords
oxygen; faceting; silicon; low energy electron diffraction (LEED); angle resolved photoemission; SI(100) SURFACES; SI(111); GROWTH; CHEMISORPTION; DECOMPOSITION; MICROSCOPY; ADSORPTION; KINETICS; SILICON; LAYERS
URI
https://oasis.postech.ac.kr/handle/2014.oak/18513
DOI
10.1016/S0039-6028(0
ISSN
0039-6028
Article Type
Article
Citation
SURFACE SCIENCE, vol. 531, no. 3, page. L357 - L362, 2003-06-01
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