Characterization of ZnO nanowire field effect transistors by fast hydrogen peroxide solution treatment
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- Title
- Characterization of ZnO nanowire field effect transistors by fast hydrogen peroxide solution treatment
- Authors
- Kwon, T; Park, W; Choe, M; Yoon, J; Park, S; Lee, S; Hwang, H; Lee, T
- Date Issued
- 2012-03
- Publisher
- Japan Society of Applied Physics
- Abstract
- This study demonstrates a simple and fast method of the operation mode control for ZnO nanowire field effect transistors (FETs) with hydrogen peroxide (H2O2, 10%) solution treatment for 5-10 s. With this H2O2 treatment, the surface of ZnO nanowires was roughened as confirmed by transmission electron microscopy images and the defect level-related emission was increased from photoluminescence (PL) data. Correspondingly, the threshold voltage of H2O2-treated ZnO nanowire FETs shifted to the positive gate bias direction, leading a transition of the operation mode from depletion-mode to enhancement-mode. This H2O2 solution treatment can be a useful method for controlling the operation mode of ZnO nanowire FETs with a wide threshold voltage shift in a few second solution treatment. (C) 2012 The Japan Society of Applied Physics
- Keywords
- FABRICATION
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/15848
- DOI
- 10.1143/JJAP.51.035001
- ISSN
- 0021-4922
- Article Type
- Article
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 51, no. 3, 2012-03
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