DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kwon, T | - |
dc.contributor.author | Park, W | - |
dc.contributor.author | Choe, M | - |
dc.contributor.author | Yoon, J | - |
dc.contributor.author | Park, S | - |
dc.contributor.author | Lee, S | - |
dc.contributor.author | Hwang, H | - |
dc.contributor.author | Lee, T | - |
dc.date.accessioned | 2016-03-31T08:41:52Z | - |
dc.date.available | 2016-03-31T08:41:52Z | - |
dc.date.created | 2013-03-08 | - |
dc.date.issued | 2012-03 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.other | 2012-OAK-0000026967 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/15848 | - |
dc.description.abstract | This study demonstrates a simple and fast method of the operation mode control for ZnO nanowire field effect transistors (FETs) with hydrogen peroxide (H2O2, 10%) solution treatment for 5-10 s. With this H2O2 treatment, the surface of ZnO nanowires was roughened as confirmed by transmission electron microscopy images and the defect level-related emission was increased from photoluminescence (PL) data. Correspondingly, the threshold voltage of H2O2-treated ZnO nanowire FETs shifted to the positive gate bias direction, leading a transition of the operation mode from depletion-mode to enhancement-mode. This H2O2 solution treatment can be a useful method for controlling the operation mode of ZnO nanowire FETs with a wide threshold voltage shift in a few second solution treatment. (C) 2012 The Japan Society of Applied Physics | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | Japan Society of Applied Physics | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.subject | FABRICATION | - |
dc.title | Characterization of ZnO nanowire field effect transistors by fast hydrogen peroxide solution treatment | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1143/JJAP.51.035001 | - |
dc.author.google | Kwon, T | - |
dc.author.google | Park, W | - |
dc.author.google | Choe, M | - |
dc.author.google | Yoon, J | - |
dc.author.google | Park, S | - |
dc.author.google | Lee, S | - |
dc.author.google | Hwang, H | - |
dc.author.google | Lee, T | - |
dc.relation.volume | 51 | - |
dc.contributor.id | 10079928 | - |
dc.relation.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.51, no.3 | - |
dc.identifier.wosid | 000301348400031 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.number | 3 | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 51 | - |
dc.contributor.affiliatedAuthor | Hwang, H | - |
dc.identifier.scopusid | 2-s2.0-84863297424 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 1 | - |
dc.description.scptc | 1 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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